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Same model may have multiple batches, images only for reference.
IXGH40N120A2 Real Image
Same model may have multiple batches, images only for reference.

IXGH40N120A2

Part No IXGH40N120A2
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 75A 360W TO247  /  IGBT PT 1200 V 75 A 360 W Through Hole TO-247AD
Datasheet
IXGH40N120A2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Package Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Power - Max 360 W
Switching Energy 15mJ (off)
Input Type Standard
Gate Charge 136 nC
Td (on/off) @ 25°C 22ns/420ns
Test Condition 960V, 40A, 2Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1022848-IXGH40N120A2
Ultra Librarian 3D Model Ultra Librarian IXGH40N120A2 CAD Model

Description

The IXYS IXGH40N120A2 is a PT type insulated gate bipolar transistor (IGBT) with a collector-emitter voltage rating of 1200 V and a maximum collector current rating of 75 A.

  • Collector-Emitter Voltage: 1200 V
  • Maximum Collector Current: 75 A
  • Maximum On-State Voltage Drop: 2 V @ a gate-emitter voltage of 15 V and a collector current of 40 A
  • Package: TO-247-3
  • Supplier Device Package: TO-247AD
  • Maximum Power Dissipation: 360 W
  • Category: Discrete Semiconductor Products
  • Package: Tube with 30 units per package

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Quantity Unit Price Ext. Price
3+ $20.6072 $61.8216
6+ $16.9085 $101.4510
10+ $16.3801 $163.8010
13+ $15.8517 $206.0721
17+ $15.3234 $260.4978
22+ $13.7382 $302.2404
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Availability: 660 pieces
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