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Same model may have multiple batches, images only for reference.
IXGQ85N33PCD1 Real Image
Same model may have multiple batches, images only for reference.

IXGQ85N33PCD1

Part No IXGQ85N33PCD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 330V 85A 150W TO3P
Datasheet
IXGQ85N33PCD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 330V
Maximum Current Collector 85A
Collector-emitter saturation voltage(Max) 3V @ 15V, 100A
Maximum Power Dissipation 150W
Input Type Standard
Gate Charge 80nC
Reverse Recovery Time (trr) 250ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1049672-IXGQ85N33PCD1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian IXGQ85N33PCD1 CAD Model

Description

This electronic component is an IGBT type semiconductor manufactured by IXYS with the Win Source Part Number 1049672-IXGQ85N33PCD1.

  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Case/Package: TO-3P
  • Maximum Current Collector: 85A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 330V
  • Maximum Power Dissipation: 150W
  • Collector-Emitter Saturation Voltage (Max): 3V @ 15V, 100A

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Quantity Unit Price Ext. Price
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23+ $5.1793 $119.1239
35+ $5.0175 $175.6125
48+ $4.8556 $233.0688
62+ $4.6937 $291.0094
83+ $4.2081 $349.2723
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Availability: 7,595 pieces
MOQ: 10 pcs
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