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Same model may have multiple batches, images only for reference.
IXGT32N90B2D1 Real Image
Same model may have multiple batches, images only for reference.

IXGT32N90B2D1

Part No IXGT32N90B2D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 900V 64A 300W TO268 / HiPerFAST IGBT with Fast Diode
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer IXYS
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 900V
Current - Collector (Ic) (Maximum) 64A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 32A
Power - Max 300W
Switching Energy 2.2mJ (off)
Input Type Standard
Gate Charge 89nC
Td (on/off) at 25°C 20ns/260ns
Test Condition 720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr) 190ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268
Part Number Series IXG*32N90
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 809543-IXGT32N90B2D1
Ultra Librarian 3D Model Ultra Librarian IXGT32N90B2D1 CAD Model

Description

IXYS manufactures the IXGT32N90B2D1, an IGBT transistor.

  • Maximum Power Dissipation: 300W
  • Maximum Collector Current: 64A
  • Reverse Recovery Time: 190ns
  • Gate Charge: 89nC
  • Collector-Emitter Breakdown Voltage: 900V
  • Vce(on) @ 15V, 32A: 2.7V
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Mounting: SMD
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer Pack Quantity: 30
  • MSL Level: 1 (Unlimited)

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