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Same model may have multiple batches, images only for reference.
IXSH35N100A Real Image
Same model may have multiple batches, images only for reference.

IXSH35N100A

Part No IXSH35N100A
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1000V 70A 300W TO247AD
Datasheet
IXSH35N100A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 70A
Pulsed Collector Current 140A
Collector-emitter saturation voltage(Max) 3.5V @ 15V, 35A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 10mJ (off)
Input Type Standard
Gate Charge 180nC
Turn-on and Turn-off delay time 80ns/400ns
Testing Conditions 800V, 35A, 2.7 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049704-IXSH35N100A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXSH35N100A CAD Model

Description

The IXYS IXSH35N100A is an obsolete(EOL) through-hole IGBT transistor that is suitable for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 1000V
  • Collector Current: 70A
  • Maximum Power Dissipation: 300W
  • Pulsed Collector Current: 140A
  • Gate Charge: 180nC
  • Collector-Emitter Saturation Voltage: 3.5V @ 15V, 35A
  • Total Switching Energy: 10mJ (off)
  • Turn-On and Turn-Off Delay Time: 80ns/400ns
  • Package: TO-247AD (IXSH)
  • Temperature Range: -55°C to 150°C (TJ)

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