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Same model may have multiple batches, images only for reference.
IXTH30N25 Real Image
Same model may have multiple batches, images only for reference.

IXTH30N25

Part No IXTH30N25
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 30A TO-247
Datasheet
IXTH30N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 136nC @ 10V
Max Input Capacitance 3950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049795-IXTH30N25
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH30N25 CAD Model

Description

The IXTH30N25 is an N-channel MOSFET from IXYS.

  • Maximum Power Dissipation: 200W (Tc)
  • Maximum Continuous Drain Current: 30A (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 75 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Mounting: Through-Hole
  • Package: TO-247 (IXTH)
  • Suitable for: Discrete Semiconductor Products
  • Drive Voltage: 10V

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Quantity Unit Price Ext. Price
1+ $89.7909 $89.7909
2+ $73.6751 $147.3502
3+ $71.3721 $214.1163
4+ $69.0702 $276.2808
5+ $66.7682 $333.8410
6+ $59.8613 $359.1678
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