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Same model may have multiple batches, images only for reference.
IXTH48N20 Real Image
Same model may have multiple batches, images only for reference.

IXTH48N20

Part No IXTH48N20
Manufacturer IXYS
Catalog FETs - Single
Description N-Channel Enhancement Mode | MOSFET N-CH 200V 48A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 48A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 50mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3000pF at 25V
Power Dissipation (Maximum) 275W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191256-IXTH48N20
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH48N20 CAD Model

Description

The IXYS IXTH48N20 is a N-channel MOSFET with a maximum drain-source breakdown voltage of 200V and a continuous drain current of 48A.

  • Maximum On-Resistance: 50mOhm @ 15A and 10V gate-source voltage
  • Package: TO-247-3
  • Power Dissipation: 275W
  • Operating Temperature Range: -55°C to 150°C
  • Gate-Source Voltage: ±20V
  • Suitable For: Automotive, communications & networking, computers & computer peripherals, consumer electronics, and industrial applications

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