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Same model may have multiple batches, images only for reference.
IXTP14N60P Real Image
Same model may have multiple batches, images only for reference.

IXTP14N60P

Part No IXTP14N60P
Manufacturer IXYS
Catalog FETs - Single
Description PolarHVTM Power MOSFET | MOSFET N-CH 600V 14A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 550mOhm at 7A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2500pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191277-IXTP14N60P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited

Description

The IXYS IXTP14N60P is a N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 14A. It has a maximum on-resistance of 550mOhm at 7A and 10V gate-source voltage. The gate-source voltage threshold is 5.5V at 250μA and the maximum gate-source voltage is ±30V. The input capacitance is 2500pF at 25V and the gate charge is 36nC at 10V. The power dissipation is 300W and it comes in a TO-220AB package. It is suitable for use in discrete semiconductor products.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
100+ $0.5100 $51.0000
240+ $0.4180 $100.3200
375+ $0.4050 $151.8750
515+ $0.3920 $201.8800
660+ $0.3790 $250.1400
885+ $0.3400 $300.9000
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