IXTP14N60P Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 550mOhm at 7A, 10V
Gate Source Voltage(th) (Maximum) at Id 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2500pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191277-IXTP14N60P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP14N60P CAD Model

Description

The IXYS IXTP14N60P is a N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 14A.

  • Drain-Source Breakdown Voltage: 600V
  • Drain Current: 14A
  • On-Resistance: 550mOhm @ 7A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 5.5V @ 250μA
  • Gate-Source Voltage: ±30V
  • Input Capacitance: 2500pF @ 25V
  • Gate Charge: 36nC @ 10V
  • Power Dissipation: 300W
  • Package: TO-220AB
  • Category: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6598 $65.9800
240+ $0.5407 $129.7680
375+ $0.5239 $196.4625
515+ $0.5071 $261.1565
660+ $0.4902 $323.5320
885+ $0.4398 $389.2230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 8,000 pieces
MOQ: 100 pcs
Order Increment : 1 piece
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