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Same model may have multiple batches, images only for reference.
APT18M80B Real Image
Same model may have multiple batches, images only for reference.

APT18M80B

Part No APT18M80B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 19A TO-247
Datasheet
APT18M80B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3760pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 530 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 051441-APT18M80B
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT18M80B CAD Model

Description

APT18M80B

The APT18M80B transistor is known for its reliability in extreme power systems, offering efficient energy distribution and control.

  • Exceptional power handling capability
  • Sophisticated electronic control features
  • Excellent current and voltage ratings

Applications:

  • High-power SMPS and UPS systems
  • Electric motor controllers
  • Renewable energy power converters

Features & Benefits:

  • Supports powerful load management
  • Suitable for operation in complex power systems
  • Minimized energy losses for optimized performance

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