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APT60M75L2LLG

Part No APT60M75L2LLG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 73A TO-264MAX
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 5mA
Max Gate Charge 195nC @ 10V
Max Input Capacitance 8930pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 893W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 36.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package 264 MAX [L2]
Dimension TO-264-3, TO-264AA
Win Source Part Number 1018099-APT60M75L2LLG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT60M75L2LLG CAD Model

Description

The Microsemi Corporation APT60M75L2LLG is a medium-popularity MOSFET device that comes in a TO-264-3, TO-264AA package.

  • Maximum Power Dissipation: 893W
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 73A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 5mA
  • Maximum Rds On at Id,Vgs: 75 mOhm @ 36.5A and 10V
  • Application: Electronic Applications

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