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APT9M100B

Part No APT9M100B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2605pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 335W (Tc)
Rds On (Maximum) @ Id, Vgs 1.4 Ohm @ 5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3
Win Source Part Number 1146918-APT9M100B
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT9M100B
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT9M100B CAD Model

Description

The APT9M100B is a high performance N-channel MOSFET from Microsemi Corporation.

  • Series: POWER MOS 8
  • Package: TO-247-3
  • Manufacturer Homepage: www.microsemi.com
  • Applications: Suitable for use in high voltage and high current applications such as power supplies, motor drives, and inverters.
  • Maximum Drain-Source Voltage: 1000V
  • Maximum Continuous Drain Current: 9A
  • Gate Threshold Voltage: 5V
  • Gate Charge: 80nC
  • Maximum Power Dissipation: 335W
  • Maximum On-Resistance: 1.4 Ohm @ 5A and 10V

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