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Same model may have multiple batches, images only for reference.
JAN2N3055 Microsemi Corporation
Same model may have multiple batches, images only for reference.

JAN2N3055

Part No JAN2N3055
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN POWER SILICON TRANSISTOR | TRANS NPN 70V 15A TO-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 15A
Voltage - Collector Emitter Breakdown (Maximum) 70V
Vce Saturation (Maximum) at Ib, Ic 2V at 3.3A, 10A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 4A, 4V
Maximum Power 6W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-3
Supplier Device Package TO-3 (TO-204AA)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191385-JAN2N3055
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JAN2N3055 CAD Model

Description

The JAN2N3055 is an NPN transistor from Microsemi Corporation.

  • Transistor Type: NPN
  • Maximum Collector Current: 15A
  • Maximum Collector-Emitter Breakdown Voltage: 70V
  • Package: TO-3 (TO-204AA)
  • Mounting Type: Through-Hole
  • DC Current Gain (hFE): 20 @ 4A, 4V
  • Vce Saturation: 2V @ 3.3A, 10A
  • Maximum Power: 6W
  • Temperature Range: -65°C to 200°C
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Manufacturer Pack Quantity: 1
  • MSL Level: 1 (unlimited)

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