The 2SC5210 is an NPN triple diffused planar silicon transistor manufactured by Mitsubishi. It is designed for high-power amplification applications, particularly in audio amplifiers and high-voltage switching circuits.

Applications:

• High-power audio amplifiers
• High-voltage switching regulators
• Motor control circuits
• Inverters
• General-purpose amplification

Features:

• High collector power dissipation (Pc = 150W)
• High collector current (Ic = 15A)
• High breakdown voltage (Vceo = 160V)
• Low saturation voltage
• Excellent hFE linearity

Benefits:

• Enables the design of high-power audio amplifiers with low distortion.
• Provides reliable performance in high-voltage switching applications.
• Offers excellent amplification characteristics.
• Contributes to efficient power conversion.
• Suitable for a wide range of applications.

Technical Specifications:

Transistor Type: NPN

Collector-Emitter Voltage (Vceo): 160V

Collector-Base Voltage (Vcbo): 160V

Emitter-Base Voltage (Vebo): 5V

Collector Current (Ic): 15A

Collector Dissipation (Pc): 150W

DC Current Gain (hFE): 50-100 (at Ic = 1A, Vce = 5V)

Transition Frequency (fT): 30 MHz

Operating Junction Temperature: 150°C

The 2SC5210 is typically packaged in a TO-3P package, allowing for efficient heat dissipation. Its robust design and high power handling capabilities make it a popular choice for demanding audio and power applications.