The 2SC3736 is a silicon NPN epitaxial planar transistor manufactured by NEC. It is designed for use in low-noise amplifier applications, particularly in VHF and UHF bands. Known for its high gain and low noise characteristics, it's ideal for sensitive receiver front-ends.

Applications

• VHF/UHF low-noise amplifiers (LNAs)
• CATV amplifiers
• Satellite receiver front-ends
• RF front-end stages

Features

• Low Noise Figure: Minimizes noise contribution, enhancing receiver sensitivity.
• High Gain: Provides excellent signal amplification.
• High Transition Frequency: Suitable for high-frequency applications in VHF and UHF bands.
• Low Feedback Capacitance: Reduces unwanted feedback and oscillations.

Benefits

• Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
• Enhanced Signal Amplification: High gain provides robust amplification for better signal quality.
• Stable Performance: Low feedback capacitance ensures stable operation and reduces the risk of oscillations.
• Ideal for High-Frequency Applications: Designed specifically for use in VHF and UHF bands.

Additional Details

The 2SC3736 is typically supplied in a small-signal package, such as SOT-23 or similar. The collector-base voltage (VCBO) is rated at 25V, the collector-emitter voltage (VCEO) at 20V, and the emitter-base voltage (VEBO) at 3V. The collector current (IC) is typically around 30mA. The transition frequency (fT) is usually around 8 GHz. The noise figure (NF) is typically very low, around 1 dB at 1 GHz. The operating temperature range is usually between -55°C and +150°C. The device's characteristics make it suitable for applications where preserving signal integrity and minimizing noise are critical.