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Same model may have multiple batches, images only for reference.
BUK9606-75B,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK9606-75B,118

Part No BUK9606-75B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
BUK9606-75B,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 95nC @ 5V
Max Input Capacitance 11693pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025370-BUK9606-75B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK9606-75B,118 CAD Model

Description

The Nexperia USA Inc. BUK9606-75B,118 is an N-Channel MOSFET with a drain-source breakdown voltage of 75V and a continuous drain current of 75A @ 25°C.

  • Power Dissipation: 300W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±15V
  • Maximum Rds On @ Id,Vgs: 5.5 mOhm @ 25A, 10V

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