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PEMZ7,315

Part No PEMZ7,315
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS NPN/PNP 12V 0.5A SOT666  /  Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA 420MHz, 280MHz 300mW Surface Mount SOT-666
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Nexperia USA Inc.
Package Tape & Reel (TR)
Product Status Not For New Designs
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 12V
Vce Saturation (Max) @ Ib, Ic 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 2V
Power - Max 300mW
Frequency - Transition 420MHz, 280MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
Base Product Number PEMZ7
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 934056714315
Standard Package 8,000
Win Source Part Number 975573-PEMZ7,315
Ultra Librarian 3D Model Ultra Librarian PEMZ7,315 CAD Model

Description

The PEMZ7,315 is a bipolar transistor array manufactured by Nexperia USA Inc.

  • Package: Tape & Reel (TR)
  • Mounting Technology: SMD (SMT)
  • Maximum Power: 300mW
  • Maximum Voltage Collector-Emitter Breakdown: 12V
  • Maximum Collector Current (Ic): 500mA
  • Transistor Type: NPN, PNP
  • Maximum Vce Saturation @ Ib, Ic: 220mV @ 10mA, 200mA
  • Maximum Collector Cutoff: 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
  • Frequency Transition: 420MHz, 280MHz
  • Package/Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
  • Operating Temperature Range: 150°C (TJ)

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105+ $0.4906 $51.5130
250+ $0.4026 $100.6500
385+ $0.3900 $150.1500
530+ $0.3774 $200.0220
690+ $0.3649 $251.7810
920+ $0.3271 $300.9320
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