The BAT760/DG is a state-of-the-art Schottky barrier diode designed and manufactured by NXP Semiconductors, a leader in the electronics industry. This product stands out for its low forward voltage drop and high efficiency, making it an ideal choice for a variety of applications that require fast switching and low power loss.

Key Features

• Low Forward Voltage: The BAT760/DG boasts a very low forward voltage drop, which enhances its efficiency in circuits, reducing energy consumption and improving overall performance.
• High Switching Speed: With its fast switching capability, the BAT760/DG is perfect for high-frequency applications, where rapid transitions are essential.
• Low Leakage Current: The diode's design minimizes leakage current, ensuring reliability and stability in your electronic designs.
• Robust Package: Encased in a durable package, the BAT760/DG is designed to withstand harsh conditions and provide a long operational lifespan.

Applications

The BAT760/DG is versatile and can be used in a wide range of applications, including:

• Power supply circuits
• DC-DC converters
• Reverse polarity protection
• Load switch applications
• Automotive applications

Technical Specifications

Parameter Value Package SOD-123F Maximum Forward Voltage 0.37V at 1A Maximum Reverse Current 0.2µA at 25°C Operating Temperature Range -65°C to +150°C

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The BAT760/DG is produced with stringent quality control measures, ensuring that each unit meets the highest standards of reliability and performance.