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BF1208

Part No BF1208
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description Dual N-channel dual gate MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1153055-BF1208
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BF1208 CAD Model

Description

The NXP BF1208 is a high-performance, dual-gate N-channel MOSFET that has been meticulously designed for use in a wide array of RF applications. This compact, yet powerful, semiconductor device is particularly suitable for VHF and UHF applications, where it provides exceptional gain and noise figures, making it an ideal choice for the front end of RF amplifiers in both commercial and consumer electronic devices.

Key Features

  • High Gain: The BF1208 offers a high forward transfer admittance, which translates into excellent gain characteristics. This makes it particularly useful in applications where signal amplification is critical.
  • Low Noise Figure: With its low noise figure, the BF1208 ensures that the signal integrity is maintained, minimizing the introduction of unwanted noise during amplification, which is crucial for high-fidelity applications.
  • Dual-Gate Configuration: The dual-gate design provides improved control and stability of the amplification process, allowing for more precise performance tuning.
  • Enhanced Durability: Constructed with NXP's proven silicon technology, the BF1208 is built to last and withstand the demands of continuous operation in challenging environments.

Applications

The versatility of the NXP BF1208 allows it to be integrated into a variety of RF circuits and systems. Common applications include:

  • RF amplifiers for VHF and UHF bands
  • Mixers and oscillators in television tuners
  • Low-noise input stages for satellite receivers
  • Professional communication equipment
  • High-performance wireless systems

Technical Specifications

  • Package: SOT143B
  • Drain-Source Voltage (Vds): 8 V
  • Continuous Drain Current (Id): 30 mA
  • Power Dissipation (Pd): 300 mW
  • Operating Temperature Range: -55°C to +150°C

With its superior performance and reliability, the NXP BF1208 is a smart choice for designers looking to enhance their RF circuits with a robust and efficient MOSFET. Its small form factor and high level of integration make it an excellent component for space-constrained applications that require high-quality signal amplification.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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