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PBSS4140S,126

Part No PBSS4140S,126
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 1A SOT54
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 500mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 300 @ 500mA, 5V
Maximum Power Dissipation 830mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 1086466-PBSS4140S,126
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBSS4140S,126 CAD Model

Description

Overview of NXP's PBSS4140S,126

The NXP PBSS4140S,126 is a high-performance, low-voltage double NPN transistor housed in a small Surface-Mounted Device (SMD) plastic package. This product is designed to deliver efficient power management and signal processing in a compact form factor, making it a versatile component for a wide range of electronic applications.

Key Features

  • Low V<sub>CEsat: The device boasts a low collector-emitter saturation voltage, which results in reduced power loss and improved efficiency, especially in low-voltage switching applications.
  • High Current Capability: With a maximum continuous collector current of up to 1 A, the PBSS4140S,126 can handle significant current, making it suitable for driving moderate loads.
  • High-Speed Switching: The transistor is optimized for high-speed switching, which is essential for applications requiring quick response times and high-frequency operation.
  • Small Package Size: The SOT363 package is compact and space-efficient, allowing for high-density mounting and saving valuable board space in tight designs.

Applications

The versatility of the PBSS4140S,126 makes it an ideal choice for a variety of applications, including but not limited to:

  • Power management circuits
  • DC-DC converters
  • Battery-driven devices
  • Switching regulators
  • Motor control circuits

Technical Specifications

Parameter Value Configuration Double NPN Collector-Emitter Voltage (V<sub>CEO) 40 V Collector Current (I<sub>C) 1 A Collector-Emitter Saturation Voltage (V<sub>CEsat) Low Package SOT363

The PBSS4140S,126 by NXP Semiconductors is a reliable and efficient solution for designers seeking a high-performance double NPN transistor. With its low saturation voltage, high current handling, and fast switching capabilities, it is engineered to meet the demands of modern electronic devices.

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