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PDTB113ET

Part No PDTB113ET
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW TO236AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 33 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 042083-PDTB113ET
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTB113ET CAD Model

Description

The PDTB113ET is a high-performance PNP bipolar digital transistor, manufactured by NXP Semiconductors, a leader in the field of high-quality electronic components. This transistor is part of the PDTB series, which is designed to provide users with a reliable and efficient solution for switching and amplification applications in various electronic circuits.

Key Features

  • Transistor Type: PNP - The PDTB113ET is a PNP transistor, which means it is turned on or off when a negative voltage is applied to its base terminal.
  • Integrated Resistor: The device comes with a built-in bias resistor network, which simplifies circuit design and reduces component count, leading to a more compact and reliable end product.
  • High Current Gain: With a high current gain (hFE), this transistor can amplify a small input current into a much larger output current, making it suitable for driving larger loads.
  • Low V<sub>CEsat: The low collector-emitter saturation voltage ensures efficient operation with minimal power loss, which is crucial for battery-powered devices.
  • Surface-Mount Package: The PDTB113ET is available in a small surface-mount package, which is ideal for modern, space-constrained electronic assemblies.

Applications

Due to its robust performance characteristics, the PDTB113ET is well-suited for a wide range of applications, including:

  • Switching and amplification in consumer electronics
  • Driver circuits for relays, motors, and LEDs
  • Power management in portable devices
  • Signal processing
  • Control systems

Technical Specifications

The PDTB113ET boasts a collector current of up to 100 mA and a maximum collector-emitter voltage of 50 V, providing a good balance between power handling and voltage requirements for most low to medium power applications. The built-in resistor values are optimized for typical circuit configurations, ensuring ease of integration into a variety of designs.

For engineers and designers looking for a reliable and efficient PNP transistor, the NXP PDTB113ET is an excellent choice, combining performance with practicality in a compact, surface-mount package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
850+ $0.0681 $57.8850
2,085+ $0.0554 $115.5090
3,195+ $0.0543 $173.4885
4,445+ $0.0520 $231.1400
5,685+ $0.0508 $288.7980
7,695+ $0.0450 $346.2750
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,100 pieces
MOQ: 850 pcs
Order Increment : 1 pcs
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