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PHD2N60E

Part No PHD2N60E
Manufacturer NXP / Nexperia
Catalog OEM Parts (O - R)
Description 1.9 A 600 V 6 Ohm N-channel Si Power Mosfet
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Rohs State Need to verify
ECAD Module
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Win Source Part Number 1084717-PHD2N60E
Categories OEM Parts(O-R)
Manufacturer NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PHD2N60E CAD Model

Description

The PHD2N60E is a robust Power MOSFET device designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This power MOSFET is engineered to deliver optimal performance in a wide range of applications, making it an excellent choice for designers looking for a reliable and efficient power management solution.

Key Features:

  • Voltage Rating: The PHD2N60E operates at a drain-source voltage (VDS) of 600V, providing a substantial voltage rating for high-voltage applications.
  • Current Handling: This device is capable of handling continuous drain current (ID) of up to 2.3A, ensuring adequate current flow for a variety of electronic circuits.
  • Low On-Resistance: With a low on-state resistance (RDS(on)), the PHD2N60E ensures high efficiency and minimal power loss during operation, which is critical for maintaining performance in power-sensitive designs.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies, which is essential for power supplies and converters.
  • TO-252 (DPAK) Package: The compact TO-252 (DPAK) package allows for efficient heat dissipation and space-saving on PCBs, making it suitable for compact designs.

Applications:

The PHD2N60E from NXP is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power inverters and converters
  • Motor control circuits
  • Lighting applications, such as LED drivers
  • High-efficiency power management systems

Quality and Reliability:

NXP Semiconductors is committed to delivering high-quality products. The PHD2N60E MOSFET is built to meet rigorous standards, ensuring long-term reliability and stability in your electronic designs. With its superior electrical characteristics and thermal performance, this power MOSFET is an excellent choice for engineers looking to enhance their power management systems.

Whether you're designing for industrial, commercial, or consumer electronics, the PHD2N60E Power MOSFET from NXP Semiconductors offers the performance and reliability needed to power your innovations.

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