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PHP110NQ08LT,127

Part No PHP110NQ08LT,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 127.3nC @ 10V
Max Input Capacitance 6631pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1087824-PHP110NQ08LT,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHP110NQ08LT,127 CAD Model

Description

The PHP110NQ08LT,127 is a high-performance MOSFET produced by NXP Semiconductors, a renowned leader in the electronics industry. This product is designed to cater to a variety of applications, particularly in the power management sector. It is well-suited for use in high-efficiency power supplies, motor controls, and other power conversion and management applications.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which ensures minimal power loss during operation and enhances overall efficiency.
  • High-Speed Switching: PHP110NQ08LT,127 is optimized for high-speed switching applications, providing the responsiveness needed for modern electronic circuits.
  • Robust Thermal Performance: With an excellent thermal design, this MOSFET can handle high currents and dissipate heat effectively, ensuring long-term reliability.
  • Logic Level Gate Drive: It can be driven at logic level voltages, making it compatible with a wide range of control circuits and simplifying the design of the power stage.

Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 80V Continuous Drain Current (I<sub>D) 110A Power Dissipation (P<sub>D) 200W Operating Temperature Range -55°C to +175°C R<sub>DS(on) 8.5 mΩ

Applications

The versatility of the PHP110NQ08LT,127 MOSFET makes it an excellent choice for a wide array of applications. Its high current capacity and efficiency make it ideal for:

  • DC/DC Converters
  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • Motor Drives
  • Battery Management Systems

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PHP110NQ08LT,127 MOSFET is no exception, having undergone rigorous testing to ensure its performance and durability in demanding environments.

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