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1SS351-TB-E

Part No 1SS351-TB-E
Manufacturer ON Semiconductor
Catalog RF Diodes
Description DIODE SCHOTTKY 30MA 5V CP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max) 5V
Current - Max 30mA
Capacitance @ Vr, F 0.9pF @ 0.2V, 1MHz
Temperature Range - Operating 125°C (TJ)
Case / Package 3-CP
Win Source Part Number 102053-1SS351-TB-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 1SS351-TB-E CAD Model

Description

The 1SS351-TB-E is a high-performance diode from ON Semiconductor, renowned for its efficiency and reliability in a variety of electronic applications. This small signal diode is designed to meet the stringent requirements of modern compact electronic devices. Its ultra-fast switching capability makes it an ideal choice for high-speed switching applications.

Key Features

  • Ultra-Fast Switching: The 1SS351-TB-E offers ultra-fast switching speeds, which is essential for high-frequency operations and reduces switching losses.
  • Low Forward Voltage Drop: With a low forward voltage drop, this diode ensures minimal power loss during conduction, enhancing the overall efficiency of the application it is used in.
  • High Reliability: ON Semiconductor's commitment to quality means that the 1SS351-TB-E is built to last, ensuring long-term reliability for your electronic projects.
  • Surface Mount Package: The diode comes in a compact SOT-23 package, which is suitable for surface-mounted design, saving valuable board space and facilitating easier manufacturing processes.

Applications

The versatility of the 1SS351-TB-E makes it suitable for a wide range of applications, including but not limited to:

  • High-speed switching circuits
  • Inverter circuits
  • Protection circuits
  • Power management systems
  • Portable devices
  • Automotive applications

Electrical Characteristics

The 1SS351-TB-E diode boasts impressive electrical characteristics that ensure optimal performance in various circuits:

  • Peak Reverse Voltage (VRM): 80 V
  • Maximum Forward Current (IFM): 100 mA
  • Forward Voltage (VF) at IF = 10 mA: 1.0 V max
  • Reverse Current (IR) at VR = 80 V: 0.1 µA max
  • Reverse Recovery Time (trr): 3 ns typ

Conclusion

The 1SS351-TB-E from ON Semiconductor is a testament to the company's dedication to providing high-quality, high-performance components for the electronics industry. Whether you're designing a sophisticated power management system or looking for a reliable diode for high-speed switching, the 1SS351-TB-E is an excellent choice that promises to deliver exceptional performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
270+ $0.2164 $58.4280
655+ $0.1776 $116.3280
1,010+ $0.1721 $173.8210
1,390+ $0.1666 $231.5740
1,795+ $0.1610 $288.9950
2,400+ $0.1444 $346.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 618 pieces
MOQ: 270 pcs
Order Increment : 1 pcs
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