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2N3904ZL1G

Part No 2N3904ZL1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.2A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 625mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 100877-2N3904ZL1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N3904ZL1G CAD Model

Description

ON Semiconductor 2N3904ZL1G NPN Bipolar Transistor

The 2N3904ZL1G is a versatile NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is a crucial component in a wide range of electronic applications due to its high performance and reliability.

With its ability to amplify current, the 2N3904ZL1G makes an ideal choice for various circuit applications, including small signal amplification and switching. The device is housed in a TO-92 package, which is widely used for through-hole mounting, making it suitable for general-purpose applications in commercial, industrial, and educational environments.

Key Features:

  • Transistor Polarity: NPN - This indicates that the transistor is designed to control the flow of electrons from the emitter to collector.
  • Collector-Emitter Voltage (VCEO): 40V - This is the maximum voltage the transistor can withstand from the collector to the emitter while the base is open.
  • Collector-Base Voltage (VCBO): 60V - This rating specifies the maximum voltage that can be applied between the collector and base with the emitter open.
  • Emitter-Base Voltage (VEBO): 6V - This is the maximum voltage that can be applied between the emitter and base without causing damage.
  • Collector Current (IC): 200mA - The transistor can handle up to 200 milliamperes of continuous collector current, making it suitable for a variety of low to medium power applications.
  • Power Dissipation (Pd): 625mW - This is the amount of power the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): A range from 100 to 300 - This parameter defines the ratio of the collector current to the base current, indicating the level of amplification possible.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - This wide temperature range ensures reliable operation under various environmental conditions.
  • RoHS Compliant: The 2N3904ZL1G meets the Restriction of Hazardous Substances Directive, making it environmentally friendly and suitable for use in green electronics.

The 2N3904ZL1G transistor from ON Semiconductor is an industry-standard component known for its high-quality performance. It is a practical choice for designers and hobbyists alike who require a reliable NPN transistor for their electronic projects. Whether for amplification, switching, or as a discrete component in digital logic circuits, the 2N3904ZL1G offers a cost-effective solution without compromising on quality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6664 $59.9760
215+ $0.5475 $117.7125
330+ $0.5301 $174.9330
455+ $0.5128 $233.3240
585+ $0.4955 $289.8675
780+ $0.4447 $346.8660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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