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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 210mV @ 30mA, 1.5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 3.5W
Frequency - Transition 420MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 1004203-2SA2012-TD-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA2012-TD-E CAD Model

Description

ON Semiconductor 2SA2012-TD-E PNP Transistor

The ON Semiconductor 2SA2012-TD-E is a PNP bipolar junction transistor (BJT) designed for high-speed switching applications. This semiconductor device is a crucial component in modern electronic circuits, offering a blend of high performance and reliability for a range of applications including signal processing, power management, and amplification.

Key Features:

  • High Current Capacity: The 2SA2012-TD-E can handle continuous collector currents up to 1A, which makes it suitable for moderate power handling requirements.
  • Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage (V<sub>CE(sat)), which helps in reducing power loss and improving efficiency in switching applications.
  • High-Speed Switching: With its fast switching capabilities, the 2SA2012-TD-E is an excellent choice for applications that require quick transitions between on and off states.
  • Complementary NPN Type Available: For applications requiring a complementary BJT pair, the 2SA2012-TD-E has a corresponding NPN partner, which allows for push-pull configuration, a common technique to achieve higher efficiency in amplifiers.

Electrical Characteristics:

  • Collector-Emitter Voltage (V<sub>CEO): -50 V
  • Emitter-Base Voltage (V<sub>EBO): -5 V
  • Collector Current (I<sub>C): -1 A
  • Power Dissipation (P<sub>D): 1 W
  • Transition Frequency (f<sub>T): 120 MHz

Package and Mounting:

The 2SA2012-TD-E comes in a compact SOT-89 surface-mount package, which is ideal for space-constrained applications. This package type also allows for efficient thermal management and is compatible with automated PCB assembly processes, thus facilitating mass production.

Applications:

This PNP transistor is versatile and can be used in various electronic circuits, including:

  • Audio Amplifiers
  • DC-DC Converters
  • Motor Controllers
  • Switching Regulators
  • Charge Pumps

With its robustness and high-speed switching performance, the ON Semiconductor 2SA2012-TD-E is a reliable choice for designers and engineers looking to enhance the efficiency and performance of their electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3661 $65.8980
435+ $0.3002 $130.5870
670+ $0.2911 $195.0370
920+ $0.2820 $259.4400
1,185+ $0.2729 $323.3865
1,590+ $0.2445 $388.7550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,884 pieces
MOQ: 180 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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