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2SA2039-E

Part No 2SA2039-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 5A TP / Bipolar (BJT) Transistor PNP 50 V 5 A 360MHz 800 mW Through Hole TP
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 430mV @ 100mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Power - Max 800 mW
Frequency - Transition 360MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Product Number 2SA2039
Standard Package 500 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 855069-2SA2039-E
Ultra Librarian 3D Model Ultra Librarian 2SA2039-E CAD Model

Description

ON Semiconductor 2SA2039-E PNP Transistor

The ON Semiconductor 2SA2039-E is a PNP bipolar junction transistor (BJT) designed for use in high-speed switching applications. This robust semiconductor device is a critical component in a variety of electronic circuits, offering high reliability and performance. The 2SA2039-E is especially well-suited for use in power management systems, signal processing, and other applications where efficient current control is needed.

Key Features

  • Voltage Ratings: The 2SA2039-E has a collector-base voltage (VCBO) of -20V, a collector-emitter voltage (VCEO) of -12V, and an emitter-base voltage (VEBO) of -5V, making it suitable for medium voltage applications.
  • Current Capacity: With a continuous collector current (IC) of -2A, it can handle significant current loads for its size, which is essential for power switching applications.
  • High-Speed Switching: The device features a high transition frequency (fT) of 100MHz, providing excellent performance in high-speed switching operations.
  • Low Saturation Voltage: The low collector-emitter saturation voltage ensures efficient operation with minimal power loss, which is beneficial for battery-powered devices.
  • Power Dissipation: The transistor can dissipate up to 1W of power, allowing it to handle moderate levels of power without overheating.
  • Package: Encased in a TO-92 package, the 2SA2039-E is compact and suitable for through-hole mounting, which is favorable for prototyping and manufacturing.

Applications

The 2SA2039-E PNP transistor is versatile and can be used in a wide range of electronic circuits. Common applications include:

  • Power supply circuits
  • DC-DC converters
  • Motor controllers
  • Audio amplifiers
  • Signal amplification
  • Driver stages in hi-fi systems

ON Semiconductor's commitment to quality ensures that the 2SA2039-E transistor meets the stringent requirements of the electronics industry. Whether you are designing consumer electronics or industrial control systems, the 2SA2039-E provides the performance and reliability necessary for your applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9547 $52.5085
130+ $0.7833 $101.8290
200+ $0.7589 $151.7800
275+ $0.7344 $201.9600
355+ $0.7099 $252.0145
475+ $0.6365 $302.3375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,216 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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