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2SC2812-5-TB-E

Part No 2SC2812-5-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANSISTOR / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Obsolete
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 13214-2SC2812-5-TB-E
Ultra Librarian 3D Model Ultra Librarian 2SC2812-5-TB-E CAD Model

Description

ON Semiconductor 2SC2812-5-TB-E NPN Bipolar Transistor

The 2SC2812-5-TB-E from ON Semiconductor is a versatile and efficient NPN bipolar transistor designed for general-purpose amplifier and switching applications. This semiconductor device is known for its reliability and high performance, making it a popular choice among electronic engineers and designers for a variety of circuits.

With its compact SOT-23 package, the 2SC2812-5-TB-E is engineered to save space on printed circuit boards (PCBs), while providing excellent thermal performance. The device features a collector-emitter voltage (VCEO) of 50V, which allows it to handle moderate voltage applications with ease. Additionally, it has a collector current (IC) rating of 150mA, making it suitable for driving small loads in electronic circuits.

The hFE (DC current gain) parameter of this transistor is in the range of 270 to 690 at IC = 2mA, VCE = 6V, which ensures a consistent and predictable amplification factor across various devices. This is particularly important for circuit designs that require precise control over gain characteristics.

The 2SC2812-5-TB-E also boasts a low collector-emitter saturation voltage (VCE(sat)), which translates to reduced power loss and improved efficiency in switching applications. This feature, combined with the device's fast switching times, makes it an excellent choice for high-speed signal processing and power management tasks.

Users will appreciate the robustness of the 2SC2812-5-TB-E, as it can withstand a maximum collector-base voltage (VCBO) of 60V and a maximum emitter-base voltage (VEBO) of 7V. This durability ensures that the transistor can perform reliably even under stressful conditions, contributing to the longevity of the overall electronic design.

In summary, the ON Semiconductor 2SC2812-5-TB-E NPN bipolar transistor is a high-quality component that offers a balance of power handling, efficiency, and size. Its electrical characteristics make it an ideal choice for a wide range of applications, including but not limited to amplification, switching, and signal modulation in consumer electronics, industrial control systems, and telecommunications equipment.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3627 $58.0320
390+ $0.2980 $116.2200
600+ $0.2888 $173.2800
830+ $0.2795 $231.9850
1,070+ $0.2703 $289.2210
1,430+ $0.2426 $346.9180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,770 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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