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2SB1121S-TD

Part No 2SB1121S-TD
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 25V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 600mV @ 75mA, 1.5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 500mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 197490-2SB1121S-TD
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1121S-TD CAD Model

Description

ON Semiconductor 2SB1121S-TD PNP Transistor

The ON Semiconductor 2SB1121S-TD is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor features a small flat lead SOT-89 package, making it suitable for surface mount technology (SMT) and ideal for compact circuit designs. The 2SB1121S-TD is known for its reliability and efficiency, which is essential for modern electronic devices.

With a collector-base voltage (VCBO) of -50V and a collector-emitter voltage (VCEO) of -50V, the 2SB1121S-TD is capable of handling moderate voltage applications. The collector current (IC) rating of -1A ensures that the transistor can drive a substantial amount of current, making it suitable for power switching applications. Additionally, the power dissipation (PD) of 1W allows for efficient operation without the risk of overheating, provided that proper heat sinking is in place.

The high gain bandwidth product (fT) of 120MHz makes the 2SB1121S-TD an excellent choice for amplification purposes in audio and RF circuits. The low saturation voltage (VCE(sat)) ensures that the transistor can switch on and off quickly, which is beneficial for high-speed switching applications. This feature also contributes to reduced power loss and improved energy efficiency.

The 2SB1121S-TD is designed to offer low leakage current and high-speed switching, making it an optimal choice for applications such as DC-DC converters, power management circuits, and general-purpose amplification. Its robustness and durability are backed by ON Semiconductor's commitment to quality, ensuring that this component can withstand the rigors of everyday use in commercial and industrial environments.

In summary, the ON Semiconductor 2SB1121S-TD PNP transistor is a compact and efficient solution for designers looking to incorporate a reliable switching or amplification component into their electronic designs. Whether for audio amplifiers, power supplies, or other general-purpose applications, this transistor offers the performance and dependability that modern electronics demand.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.0651 $81.1953
6+ $22.2072 $133.2432
9+ $21.5130 $193.6170
12+ $20.8200 $249.8400
15+ $20.1259 $301.8885
20+ $18.0434 $360.8680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,700 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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