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2SB1122S-TD-E

Part No 2SB1122S-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 500mW
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 005802-2SB1122S-TD-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB1122S-TD-E CAD Model

Description

Product Overview: 2SB1122S-TD-E by ON Semiconductor

The 2SB1122S-TD-E is a high-performance PNP bipolar transistor manufactured by ON Semiconductor, a leader in energy-efficient electronics innovation. This semiconductor device is designed to offer exceptional amplification and switching capabilities, making it suitable for a variety of applications across multiple industries.

Key Features

  • Transistor Polarity: PNP - This configuration signifies that the majority charge carriers are holes, making it suitable for use in positive ground circuits.
  • Collector-Emitter Voltage (VCEO): The device can handle voltages up to 50V, providing a good balance between performance and reliability.
  • Collector Current (IC): It has a collector current rating of up to 1A, ensuring it can handle moderate power applications.
  • Power Dissipation (Pd): The transistor is capable of dissipating up to 900mW of power, which is substantial for its size and ensures efficient operation.
  • DC Current Gain (hFE): It features a high DC current gain, which allows for significant amplification of the input signal. This makes it ideal for applications requiring signal amplification.
  • Package / Case: The 2SB1122S-TD-E comes in a compact SOT-89 package, which is known for its small footprint and suitability for surface-mount technology (SMT).
  • Operating Temperature Range: It can reliably operate within the temperature range of -55°C to +150°C, making it robust enough for challenging environmental conditions.

Applications

The versatility of the 2SB1122S-TD-E makes it an excellent choice for a wide array of applications. It is commonly used in power management circuits, audio amplifiers, signal processing, and other general-purpose amplification and switching tasks. Its reliability and efficiency also make it a preferred component in consumer electronics, industrial systems, and automotive technologies.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products that meet rigorous industry standards. The 2SB1122S-TD-E is no exception and is built to provide reliable performance over its lifespan, backed by ON Semiconductor's expertise in semiconductor design and manufacturing.

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1728 $57.8880
815+ $0.1418 $115.5670
1,265+ $0.1374 $173.8110
1,740+ $0.1330 $231.4200
2,250+ $0.1286 $289.3500
3,010+ $0.1153 $347.0530
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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