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2SB1204T-E

Part No 2SB1204T-E
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 50V 8A TP / Bipolar (BJT) Transistor PNP 50 V 8 A 130MHz 1 W Through Hole TP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 4A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Power - Max 1 W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Product Number 2SB1204
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2156-2SB1204T-E,ONSONS2SB1204T-E
Standard Package 500
Win Source Part Number 1036514-2SB1204T-E
Ultra Librarian 3D Model Ultra Librarian 2SB1204T-E CAD Model

Description

2SB1204T-E PNP Transistor by ON Semiconductor

The 2SB1204T-E is a high-quality PNP transistor developed by ON Semiconductor, a leading name in the semiconductor industry. This versatile and efficient component is designed to meet the needs of various electronic applications, offering reliable performance and power management in a compact package.

Key Features:

  • PNP Bipolar Junction Transistor: This device is a PNP transistor, which means it is controlled by the flow of holes as majority carriers. It is typically used for amplification and switching applications.
  • High Current Capability: The 2SB1204T-E is capable of handling a continuous collector current (Ic) of up to 2A, making it suitable for moderate to high-power applications.
  • Low Saturation Voltage: It offers low saturation voltage (Vce(sat)), which enhances overall energy efficiency by minimizing power loss when the transistor is in the 'on' state.
  • High Power Dissipation: With a power dissipation (Pd) rating of 10W, this transistor can handle a significant amount of power, making it ideal for power regulation circuits.
  • High Transition Frequency: Featuring a high transition frequency (fT) of 120MHz, the 2SB1204T-E is suitable for applications that require fast switching and operation at higher frequencies.

Applications:

The 2SB1204T-E PNP transistor is used in a variety of electronic circuits. Some of the common applications include:

  • Power supply regulators
  • Audio amplifiers
  • Signal processing
  • Motor control circuits
  • Switching applications

Package and Quality Assurance:

The 2SB1204T-E is available in a TO-220AB package, which is widely used for high-power applications due to its ability to dissipate heat effectively. ON Semiconductor ensures that each unit meets stringent quality standards, providing reliability and performance that engineers and designers can trust for their critical projects.

With its robust design and versatile capabilities, the 2SB1204T-E PNP transistor from ON Semiconductor is an excellent choice for designers looking to enhance the performance and efficiency of their electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4782 $59.7750
295+ $0.3924 $115.7580
460+ $0.3801 $174.8460
630+ $0.3679 $231.7770
815+ $0.3557 $289.8955
1,090+ $0.3188 $347.4920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,960 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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