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2SB1302T-TD-E

Part No 2SB1302T-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 5A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 500mV @ 60mA, 3A
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 2V
Maximum Power Dissipation 1.3W
Frequency - Transition 320MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 1004292-2SB1302T-TD-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1302T-TD-E CAD Model

Description

ON Semiconductor 2SB1302T-TD-E PNP Transistor

The 2SB1302T-TD-E from ON Semiconductor is a high-performance PNP bipolar transistor that is designed to meet the needs of various electronic applications. This transistor is characterized by its low VCE(sat) which makes it suitable for low voltage operation and helps in reducing power loss, making it an ideal choice for power management and efficiency improvement in electronic circuits.

The device comes in a compact SOT-89 package, which is known for its small footprint and excellent power dissipation capabilities. This makes the 2SB1302T-TD-E an excellent choice for space-constrained applications where thermal performance is a critical aspect. The package is also designed for surface mount technology (SMT), which facilitates easier manufacturing and integration into various electronic assemblies.

With a collector-emitter voltage (VCEO) of -50V and a collector current (IC) of -2A, this PNP transistor can handle moderate power levels while maintaining stable operation. It is often utilized in power supply circuits, audio amplifiers, switching applications, and as a driver for larger transistors in high-power modules.

The 2SB1302T-TD-E also features fast switching speeds, which is an essential attribute for transistors used in digital and switching applications. This ensures that devices can switch on and off rapidly, thereby improving the performance of the circuit and reducing energy wastage during the switching process.

ON Semiconductor has designed the 2SB1302T-TD-E with reliability in mind. The transistor has excellent hFE linearity, which contributes to its stable gain performance over a wide range of operating conditions. This reliability is further enhanced by the company's commitment to high manufacturing standards, ensuring that each transistor meets stringent quality criteria before it reaches customers.

In summary, the 2SB1302T-TD-E is a versatile and efficient PNP transistor that offers a blend of low power dissipation, high-speed switching, and reliable performance in a compact SOT-89 package. Whether for audio amplification, power regulation, or switching applications, this ON Semiconductor product is an excellent choice for designers looking for a high-quality transistor to enhance their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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