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2SC3649T-TD-H

Part No 2SC3649T-TD-H
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 160V 1.5A PCP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1.5A
Voltage - Collector Emitter Breakdown (Maximum) 160V
Vce Saturation (Maximum) @ Ib, Ic 450mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum) 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 200 @ 100mA, 5V
Power - Max 500mW
Frequency - Transition 120MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package TO-243AA
Manufacturer Package PCP
Win Source Part Number 762600-2SC3649T-TD-H
Popularity Medium
Supply and Demand Status Limited
Family Name 2SC3649T
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian 2SC3649T-TD-H CAD Model

Description

2SC3649T-TD-H - ON Semiconductor

The 2SC3649T-TD-H from ON Semiconductor is a high-performance NPN bipolar transistor that offers excellent features suitable for a variety of electronic applications. This transistor is designed to meet the stringent requirements of modern electronic circuits, providing reliability, efficiency, and precision.

With its compact TO-92 package, the 2SC3649T-TD-H is optimized for low-power consumption while maintaining high gain characteristics. This makes it an ideal choice for portable devices where power efficiency is crucial. The TO-92 package is widely recognized for its ease of integration into PCB designs, making it a user-friendly option for both prototyping and mass production.

The transistor's maximum collector-emitter voltage (Vceo) is rated at 50V, which means it can handle moderate voltage applications with ease. Its collector current (Ic) is rated at 150mA, providing sufficient current handling capability for a wide range of uses. Additionally, the 2SC3649T-TD-H boasts a collector-base voltage (Vcbo) of 60V and emitter-base voltage (Vebo) of 5V, further demonstrating its robustness in various circuit configurations.

ON Semiconductor has equipped the 2SC3649T-TD-H with a transition frequency (ft) of 250MHz, allowing for excellent performance in high-frequency signal amplification. This makes it highly suitable for RF (Radio Frequency) applications, audio amplifiers, and signal processing where speed is a significant factor.

The 2SC3649T-TD-H also features low noise figures, making it an excellent choice for audio applications and other sensitive signal amplification tasks where maintaining signal integrity is paramount. Its high gain-bandwidth product ensures that it can amplify a broad range of frequencies without significant distortion.

In summary, the 2SC3649T-TD-H from ON Semiconductor is a versatile NPN transistor that offers a balance of power efficiency, high-frequency performance, and low noise operation. Whether you're designing consumer electronics, communication devices, or audio systems, this transistor can help achieve a high-quality and reliable end product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6979 $59.3215
205+ $0.5726 $117.3830
315+ $0.5548 $174.7620
435+ $0.5368 $233.5080
560+ $0.5190 $290.6400
745+ $0.4652 $346.5740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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