The ON Semiconductor 2SC4168-4-TB is a high-performance NPN bipolar junction transistor (BJT) that offers a blend of efficiency and reliability for a range of electronic applications. This component is designed to meet the stringent requirements of modern circuit designs, providing a versatile solution for amplification and switching tasks.

Key Features

• High Current Gain Bandwidth Product: With its excellent frequency characteristics, this transistor is suitable for applications requiring high-speed switching.
• Low Saturation Voltage: The 2SC4168-4-TB is engineered to have a low V<sub>CE(sat), which reduces power loss and improves efficiency in operation.
• High Power Rating: Capable of handling significant power levels, this BJT can be used in more demanding circuits without compromising performance.
• Robustness: This transistor is built to withstand harsh conditions, making it reliable for industrial applications that may encounter extreme temperatures or high levels of electrical stress.
• TO-220B Package: The device comes in a TO-220B package, known for its good heat dissipation properties, ensuring the transistor operates within safe temperature ranges during high-power applications.

Applications

The 2SC4168-4-TB is versatile and can be used in various applications, including:

• Power supply circuits
• Audio amplifiers
• Switching regulators
• Motor controls
• Inverters

Electrical Characteristics

Among its electrical characteristics, the 2SC4168-4-TB boasts a collector-base voltage (VCBO) of 140V, collector-emitter voltage (VCEO) of 80V, and emitter-base voltage (VEBO) of 7V. It also has a collector current (IC) rating of 3A, making it suitable for handling moderate to high current loads.

Reliability and Quality

ON Semiconductor is renowned for its commitment to quality and reliability, and the 2SC4168-4-TB is no exception. This product is manufactured with state-of-the-art technology and rigorous testing to ensure it meets the highest standards for performance and durability.