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2SD1805G-E

Part No 2SD1805G-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 5A TP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 5A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 500mV @ 60mA, 3A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 280 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TP
Win Source Part Number 197564-2SD1805G-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1805G-E CAD Model

Description

Product Overview: 2SD1805G-E by ON Semiconductor

The 2SD1805G-E is a high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed to meet the requirements of a wide range of electronic applications, offering a blend of efficiency, reliability, and versatility.

Key Features

  • High Current Capacity: The 2SD1805G-E is capable of handling high current levels, making it suitable for power amplification and switching applications.
  • Low Saturation Voltage: It exhibits low collector-emitter saturation voltage, which ensures lower power dissipation and improved efficiency in operation.
  • High-Speed Switching: Designed for high-speed switching, the transistor is an excellent choice for applications requiring rapid transitions between on and off states.
  • Complementary PNP Type Available: ON Semiconductor provides a complementary PNP type transistor, which allows for push-pull amplifier configurations, a common design in audio amplifiers and power regulators.

Applications

The 2SD1805G-E can be utilized in a variety of applications, including:

  • Power management circuits
  • Audio amplifiers
  • DC-DC converters
  • Motor control circuits
  • Switching regulators

Specifications

Some of the key electrical specifications of the 2SD1805G-E include:

  • Collector-Emitter Voltage (V<sub>CEO): 20V
  • Collector Current (I<sub>C): 3A
  • Power Dissipation (P<sub>D): 1W
  • DC Current Gain (h<sub>FE): 100 to 320 (at I<sub>C = 1A)
  • Transition Frequency (f<sub>T): 100MHz

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 2SD1805G-E is manufactured with stringent quality control processes, ensuring reliable performance and longevity for critical applications. It is also supported by ON Semiconductor's comprehensive technical resources, including datasheets, application notes, and design support.

Environmental Considerations

The 2SD1805G-E is designed with environmental responsibility in mind. It complies with RoHS directives, which restricts the use of certain hazardous substances in electrical and electronic equipment, making it a more environmentally friendly choice for manufacturers and consumers alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1344 $57.7920
1,050+ $0.1103 $115.8150
1,625+ $0.1069 $173.7125
2,235+ $0.1034 $231.0990
2,895+ $0.0999 $289.2105
3,870+ $0.0896 $346.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,610 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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