The ON Semiconductor 2SK3488-TD-E is a high-performance, N-channel power MOSFET designed to deliver efficient power management and conversion in a variety of applications. This MOSFET is part of ON Semiconductor's extensive lineup of semiconductor devices, known for their reliability and cutting-edge technology.

Key Features

• Low On-Resistance: The 2SK3488-TD-E features a low on-resistance, which minimizes conduction losses and improves overall efficiency, making it suitable for high-efficiency power supplies.
• High-Speed Switching: Designed for fast switching applications, this MOSFET provides high-speed performance, which is essential for reducing switching losses in power conversion systems.
• High Breakdown Voltage: With a high breakdown voltage, the 2SK3488-TD-E can handle high voltage applications, ensuring reliable operation even under stressful conditions.
• Enhanced Thermal Performance: The package design and materials used in the 2SK3488-TD-E allow for excellent thermal performance, ensuring the device operates within its temperature range even at high power levels.

Applications

The 2SK3488-TD-E is well-suited for a wide range of applications, including:

• Power supply units (PSUs)
• DC-DC converters
• Motor drives
• Inverters
• Switching regulators
• Automotive applications

Specifications

Some of the key specifications of the 2SK3488-TD-E include:

• Drain-to-Source Voltage (V<sub>DS): 500V
• Continuous Drain Current (I<sub>D): 10A
• Power Dissipation (P<sub>D): 45W
• Gate Threshold Voltage (V<sub>GS(th)): 4.0V
• Total Gate Charge (Q<sub>g): 30nC

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The 2SK3488-TD-E MOSFET is built with strict quality control measures and rigorous testing to ensure it meets the highest standards of performance and reliability.

Environmental Compliance

The 2SK3488-TD-E is compliant with RoHS (Restriction of Hazardous Substances) regulations, ensuring that it is environmentally friendly and safe for use in electronic equipment.