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BC817-25LT3G

Part No BC817-25LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.5A SOT-23 / Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 100mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 011084-BC817-25LT3G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BC817-25L
Introduction Date July 30, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC817-25LT3G CAD Model

Description

ON Semiconductor BC817-25LT3G NPN Transistor

The BC817-25LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) that offers a versatile solution for a wide range of electronic applications. This small-signal transistor is designed for general-purpose and switching applications, providing excellent reliability and efficiency in a compact SOT-23 package.

Key Features

  • Voltage and Current Ratings: The BC817-25LT3G can handle a collector-emitter voltage (VCEO) of 45V and a collector current (IC) of up to 500mA, making it suitable for moderate power applications.
  • Gain Bandwidth Product: With a transition frequency (fT) of 100MHz, this transistor is capable of operating at high frequencies, which is ideal for amplification and switching in audio and RF applications.
  • High Current Gain: It features a high DC current gain (hFE) range of 160 to 400 at 100mA, ensuring efficient current amplification in various circuit configurations.
  • Low Collector-Emitter Saturation Voltage: The low VCE(sat) ensures reduced power dissipation and improved efficiency, which is crucial for battery-powered devices.
  • RoHS Compliant: The device is compliant with RoHS standards, making it an environmentally friendly choice for electronic designs.

Applications

  • General-purpose switching and amplification
  • Driver stages in audio amplifiers
  • Signal processing
  • Load switch circuits
  • Power management in portable devices

The BC817-25LT3G is a reliable choice for designers looking for a transistor with a balanced combination of voltage and current handling capabilities, high-frequency performance, and low power consumption. ON Semiconductor's commitment to quality ensures that this component meets the stringent requirements of the electronics industry, making it a go-to option for both commercial and industrial applications.

Whether you're designing a new circuit or looking to replace an existing component, the BC817-25LT3G offers the performance and reliability you need in a compact and energy-efficient package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,015+ $0.0495 $50.2425
2,465+ $0.0406 $100.0790
3,810+ $0.0394 $150.1140
5,250+ $0.0381 $200.0250
6,795+ $0.0368 $250.0560
9,095+ $0.0330 $300.1350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,810 pieces
MOQ: 1015 pcs
Order Increment : 1 pcs
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