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BCW66GLT3G

Part No BCW66GLT3G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 45V 0.8A SOT23-3 / Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 300 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number BCW66
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names ONSONSBCW66GLT3G,BCW66GLT3GOSCT,BCW66GLT3GOSTR,BCW66GLT3GOSDKR,BCW66GLT3G-ND,2156-BCW66GLT3G-OS
Standard Package 10,000
Win Source Part Number 1120380-BCW66GLT3G
Ultra Librarian 3D Model Ultra Librarian BCW66GLT3G CAD Model

Description

ON Semiconductor BCW66GLT3G: High-Performance NPN Bipolar Transistor

The BCW66GLT3G by ON Semiconductor is a versatile NPN bipolar transistor that stands out due to its compact size and robust performance. This high-quality semiconductor device is designed to cater to a wide range of applications, particularly where space is at a premium and energy efficiency is of utmost importance.

Enclosed in a small SOT-23 surface-mount package, the BCW66GLT3G offers a streamlined solution for electronic circuitry. It is an ideal choice for automated assembly processes, and its small form factor allows for high-density mounting, which is crucial in today's miniaturized electronic devices.

Key Features of the BCW66GLT3G:

  • High Current Gain: This transistor boasts a high current gain (hFE), which ensures that it can control a large output current with a relatively small input current. This feature makes it highly effective for amplification and switching applications.
  • Low Voltage Operation: With a collector-emitter voltage (VCEO) of 45V, the BCW66GLT3G can operate effectively at low voltages, making it suitable for battery-powered devices and low voltage circuits.
  • Power Dissipation: It has a power dissipation of 225 mW, ensuring that it can handle a reasonable amount of power without overheating, thus maintaining reliability and longevity.
  • Operating Temperature Range: The device can operate over a wide temperature range from -55°C to +150°C, which ensures stable performance under various environmental conditions.

Whether it's for amplifying audio signals, driving loads, or switching electronic signals, the BCW66GLT3G provides excellent performance. Its high current gain and low saturation voltage make it an efficient choice for designers looking to optimize their circuitry for power and space.

In summary, the ON Semiconductor's BCW66GLT3G is a high-performance NPN bipolar transistor that delivers efficiency and reliability in a compact package. Its suitability for an array of applications, combined with the convenience of surface-mount packaging, makes it a go-to component for modern electronics where space and power efficiency cannot be compromised.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2355 $50.6325
520+ $0.1933 $100.5160
805+ $0.1872 $150.6960
1,105+ $0.1812 $200.2260
1,430+ $0.1752 $250.5360
1,915+ $0.1570 $300.6550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 215 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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