The BUV26 from ON Semiconductor is a high-performance NPN silicon power transistor designed to cater to a wide range of power applications. This device is well-suited for demanding environments requiring high speed and efficiency. It boasts a collector-emitter voltage (Vceo) of 400V, which provides a robust working range for various circuit designs.

Key Features

• High Voltage Capability: The BUV26 can handle up to 400V across the collector-emitter junction, making it suitable for high voltage applications.
• High Current Rating: With a continuous collector current (Ic) rating of 10A, this transistor can manage significant current loads, essential for power regulation and amplification tasks.
• High Power Dissipation: It has a power dissipation (Pc) of 125W, which ensures it can handle considerable power levels without overheating, provided that adequate heat sinking is used.
• Fast Switching Speed: The BUV26 is designed for fast switching applications, which is critical for efficient operation in power converters and inverters.
• Low Saturation Voltage: The low collector-emitter saturation voltage reduces power loss and improves efficiency in saturated mode operations.

Applications

The versatility of the BUV26 allows it to be used in a variety of applications, including:

• Switching regulators
• Inverters
• Motor controls
• Power amplifiers
• High power switching circuits

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability, and the BUV26 is no exception. It is built to meet the stringent requirements of industrial and commercial power applications. The device is also RoHS compliant, minimizing the environmental impact by restricting the use of hazardous substances in its construction.

Technical Specifications