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FCH190N65F-F155

Part No FCH190N65F-F155
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.6A TO247  /  N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series FRFET®, SuperFET® II
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3225 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number FCH190
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FCH190N65F_F155-ND,FCH190N65F_F155
Standard Package 450
Win Source Part Number 989265-FCH190N65F-F155
Ultra Librarian 3D Model Ultra Librarian FCH190N65F-F155 CAD Model

Description

ON Semiconductor FCH190N65F-F155: A Robust Power Solution

The FCH190N65F-F155 is a cutting-edge power MOSFET brought to you by ON Semiconductor, a renowned leader in energy-efficient innovations. This device is designed to meet the high-performance demands of modern electronic circuits, providing a reliable and efficient power management solution.

Key Features

  • High Current Capability: With a continuous drain current of 190 A, the FCH190N65F-F155 is capable of handling high-power applications with ease.
  • Low On-Resistance: This MOSFET boasts an ultra-low on-resistance (R<sub>DS(on)) of just 0.055 ohms, minimizing power losses and improving overall efficiency.
  • High Voltage Threshold: With a drain-to-source voltage (V<sub>DSS) of 650V, it provides a robust platform for high-voltage operations, ensuring reliability and durability.
  • Fast Switching: The device is optimized for fast switching, reducing switching losses and improving performance in high-frequency applications.

Applications

The FCH190N65F-F155 is ideal for a wide range of applications, including:

  • Power supply units (PSUs)
  • Uninterruptible power supplies (UPS)
  • DC-AC inverters for solar energy systems
  • Electric vehicle (EV) charging stations
  • High-power industrial applications

Advanced Technology

Utilizing ON Semiconductor's proprietary technology, the FCH190N65F-F155 is engineered for optimal performance. The MOSFET is manufactured using a rugged and reliable process that ensures high efficiency and thermal stability, even under the most demanding conditions.

Environmental and Safety Compliance

ON Semiconductor is committed to environmental stewardship. The FCH190N65F-F155 is compliant with RoHS (Restriction of Hazardous Substances) and Halogen-Free standards, making it a safe choice for both the environment and consumer electronics.

In conclusion, the FCH190N65F-F155 from ON Semiconductor represents a state-of-the-art solution for power management in high-performance electronics. Its robustness, efficiency, and compliance with environmental standards make it an indispensable component for engineers and designers looking to create reliable and energy-efficient products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2740 $58.9320
43+ $2.6865 $115.5195
67+ $2.6024 $174.3608
92+ $2.5185 $231.7020
119+ $2.4345 $289.7055
159+ $2.1827 $347.0493
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,800 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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