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FCPF1300N80ZYD

Part No FCPF1300N80ZYD
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR, N / N-Channel 800 V 4A (Tc) 24W (Tc) Through Hole TO-220F-3 (Y-Forming)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series SuperFET® II
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 100 V
Power Dissipation (Max) 24W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3 (Y-Forming)
Package / Case TO-220-3 Full Pack, Formed Leads
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-FCPF1300N80ZYD-488
Standard Package 1
Win Source Part Number 1123029-FCPF1300N80ZYD
Ultra Librarian 3D Model Ultra Librarian FCPF1300N80ZYD CAD Model

Description

Introducing the FCPF1300N80ZYD Power MOSFET by ON Semiconductor

ON Semiconductor, a leading provider of semiconductor solutions, has introduced the FCPF1300N80ZYD, a high-performance Power MOSFET designed for a wide range of applications. This advanced semiconductor device is engineered to meet the demanding requirements of energy efficiency and power density in modern electronic systems.

Key Features

  • High Current Capability: The FCPF1300N80ZYD is capable of handling a continuous drain current of up to 100A, making it suitable for high-power applications.
  • Low RDS(on): With an on-resistance as low as 80mΩ, this MOSFET ensures minimal power loss and improved efficiency during operation.
  • Fast Switching: The device is optimized for fast switching, which is critical for reducing switching losses and improving performance in power conversion systems.
  • High Avalanche Ruggedness: It is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliability and robustness in harsh conditions.
  • Low Gate Charge: A low gate charge facilitates faster switching speeds and reduces the driving power required, which is beneficial for power-sensitive designs.

Applications

The FCPF1300N80ZYD is versatile and can be used in a variety of applications, including:

  • DC/DC Converters
  • Synchronous Rectification in SMPS (Switch Mode Power Supplies)
  • Power Management for Servers
  • Motor Drives
  • Power Tools
  • Automotive Applications

Reliability and Performance

ON Semiconductor's commitment to quality and performance is evident in the FCPF1300N80ZYD Power MOSFET. It is designed to operate reliably over a wide temperature range, ensuring stable performance even under extreme conditions. The device is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

Conclusion

The FCPF1300N80ZYD from ON Semiconductor represents a significant advancement in power MOSFET technology, offering a combination of high efficiency, fast switching, and ruggedness. It is an ideal choice for designers looking to enhance the performance and reliability of their power management systems. With its robust design and versatile application range, the FCPF1300N80ZYD is set to become a go-to component for power electronics engineers.

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