The ON Semiconductor FDMS3629S is a high-performance, dual N-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This advanced MOSFET technology is ideal for synchronous buck converters, load switches, and other power circuits requiring high efficiency and low on-resistance.
Key Features
- Low On-Resistance: The FDMS3629S features an exceptionally low on-resistance (RDS(on)) of just 3.3 mΩ at VGS = 10 V, which enhances overall system efficiency by minimizing conduction losses.
- High Current Capability: With a continuous drain current (ID) of 13 A, this MOSFET can handle significant power, making it suitable for demanding applications.
- PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process optimizes the device for low gate charge (Qg), reduced capacitance (Ciss), and fast switching performance, further improving power efficiency.
- Thermal Management: The FDMS3629S comes in a compact 8-lead Power 56 package, which provides excellent thermal performance and a small footprint on the PCB.
- Integrated Schottky Diode: An integrated Schottky diode reduces component count and simplifies circuit design, while also improving efficiency by reducing switching losses.
Applications
- DC-DC Converters
- Power Supply Modules
- Point of Load (POL) Regulation
- Computing and Server Systems
- Telecommunications
- Battery Management Systems
With its combination of low on-resistance, high current capability, and fast switching performance, the ON Semiconductor FDMS3629S is a robust and versatile component for modern electronic designs. Whether it's for power supply modules or high-performance computing, this dual N-Channel MOSFET is engineered to meet the stringent requirements of energy-efficient power conversion and management solutions.