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FDS8935

Part No FDS8935
Manufacturer ON Semiconductor
Catalog Electronic Surplus
Description Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ | MOSFET 2P-CH 80V 2.1A 8SOIC
Sample
ECAD Module ECAD
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Pricing & Ordering $2.9031 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
13+
$3.9570
$51.441
31+
$3.2470
$100.657
48+
$3.1450
$150.960
66+
$3.0440
$200.904
85+
$2.9430
$250.155
114+
$2.6380
$300.732
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 5,000 pieces
MOQ: 13 pcs
Order Increment : 2500 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 2.1A
Rds On (Maximum) at Id, Vgs 183mOhm at 2.1A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 879pF at 40V
Maximum Power 1.6W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SOIC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173924-FDS8935
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Fake Threat In the Open Market 36 pct.
Supply and Demand Status Balance

Description

The ON Semiconductor FDS8935 is a high-performance, dual P-Channel PowerTrench® MOSFET designed to deliver efficient power management and switching with low on-resistance and high current handling capabilities. This advanced technology MOSFET is an ideal choice for a wide range of applications, including power management circuits, load switches, and battery management systems.

Key Features

  • Low On-Resistance: The FDS8935 features a low on-resistance of 11 mOhm at Vgs = -4.5V, contributing to its high efficiency and reduced power losses in applications.
  • Dual P-Channel MOSFET: The dual P-Channel configuration allows for compact circuit designs and simplifies the creation of complementary circuits when paired with N-Channel MOSFETs.
  • High Current Capability: With a continuous drain current of -6.5A, the FDS8935 can handle significant current loads, making it suitable for demanding applications.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process minimizes on-state resistance while maintaining superior switching performance, enhancing overall efficiency.
  • Thermal Management: The FDS8935 is encapsulated in a thermally efficient SO-8 package, providing excellent heat dissipation and ensuring reliable operation under varying conditions.

Applications

The versatility of the FDS8935 allows it to be used in a diverse array of applications. It is particularly well-suited for:

  • Power supply load switches
  • Battery management systems
  • DC/DC converters
  • Motor control circuits
  • Portable electronic devices

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the FDS8935 MOSFET meets the highest standards of reliability and performance. Its robust design is capable of withstanding harsh operating conditions, making it a reliable choice for industrial and commercial applications where consistent operation is critical.

Environmental Compliance

The FDS8935 is RoHS compliant and lead-free, reflecting ON Semiconductor's dedication to environmental sustainability and the global initiative to reduce the use of hazardous materials in electronic components.

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