The ON Semiconductor FDS8935 is a high-performance, dual P-Channel PowerTrench® MOSFET designed to deliver efficient power management and switching with low on-resistance and high current handling capabilities. This advanced technology MOSFET is an ideal choice for a wide range of applications, including power management circuits, load switches, and battery management systems.

Key Features

• Low On-Resistance: The FDS8935 features a low on-resistance of 11 mOhm at Vgs = -4.5V, contributing to its high efficiency and reduced power losses in applications.
• Dual P-Channel MOSFET: The dual P-Channel configuration allows for compact circuit designs and simplifies the creation of complementary circuits when paired with N-Channel MOSFETs.
• High Current Capability: With a continuous drain current of -6.5A, the FDS8935 can handle significant current loads, making it suitable for demanding applications.
• PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process minimizes on-state resistance while maintaining superior switching performance, enhancing overall efficiency.
• Thermal Management: The FDS8935 is encapsulated in a thermally efficient SO-8 package, providing excellent heat dissipation and ensuring reliable operation under varying conditions.

Applications

The versatility of the FDS8935 allows it to be used in a diverse array of applications. It is particularly well-suited for:

• Power supply load switches
• Battery management systems
• DC/DC converters
• Motor control circuits
• Portable electronic devices

Reliability and Performance

ON Semiconductor's commitment to quality ensures that the FDS8935 MOSFET meets the highest standards of reliability and performance. Its robust design is capable of withstanding harsh operating conditions, making it a reliable choice for industrial and commercial applications where consistent operation is critical.

Environmental Compliance

The FDS8935 is RoHS compliant and lead-free, reflecting ON Semiconductor's dedication to environmental sustainability and the global initiative to reduce the use of hazardous materials in electronic components.