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FDT4N50NZU

Part No FDT4N50NZU
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET, N-CHANNEL, UNIFETI / N-Channel 500 V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 476 pF @ 25 V
Power Dissipation (Max) 2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package SOT-223 (TO-261)
Case / Package TO-261-4, TO-261AA
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-FDT4N50NZUDKR,488-FDT4N50NZUTR,488-FDT4N50NZUCT
Standard Package 4,000
Win Source Part Number 1323921-FDT4N50NZU
Ultra Librarian 3D Model Ultra Librarian FDT4N50NZU CAD Model

Description

FDT4N50NZU MOSFET by ON Semiconductor

The FDT4N50NZU from ON Semiconductor is a high-performance, N-Channel MOSFET that is designed to deliver efficient power management and conversion. This device is part of ON Semiconductor's extensive range of power MOSFETs which are renowned for their reliability, robustness, and cutting-edge technology.

Key Features:

  • Voltage Rating: The FDT4N50NZU boasts a drain-to-source voltage (V<sub>DS) of 500V, which makes it suitable for high voltage applications.
  • Current Handling: With a continuous drain current (I<sub>D) of 4A, this MOSFET can handle significant power for a variety of electronic applications.
  • Low On-Resistance: The low on-state resistance (R<sub>DS(on)) ensures efficient operation with minimal power loss, making it ideal for high-efficiency power supplies and converters.
  • High-Speed Switching: Designed for fast switching applications, the FDT4N50NZU provides improved performance for power conversion and regulation.
  • Gate Charge: It features a low total gate charge (Q<sub>g), which reduces the energy required to turn the MOSFET on and off, thus improving the overall efficiency of the device.

Applications:

The FDT4N50NZU is versatile and can be used in a wide array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC converters
  • Motor Drives
  • Lighting applications such as LED drivers
  • High-voltage switching circuits

Quality and Reliability:

ON Semiconductor is committed to providing high-quality products. The FDT4N50NZU is no exception and is built to meet high standards of performance and reliability. It is designed to withstand tough conditions and is characterized by its longevity and stable operation over a wide range of temperatures and applications.

Whether you're designing power supplies, working on power conversion systems, or in need of a reliable MOSFET for high-voltage switching, the FDT4N50NZU from ON Semiconductor is an excellent choice that ensures performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8976 $58.3440
160+ $0.7366 $117.8560
245+ $0.7135 $174.8075
335+ $0.6905 $231.3175
435+ $0.6675 $290.3625
580+ $0.5984 $347.0720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,890 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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