ON Semiconductor NGD18N40CLBT4G - IGBT Transistor

The NGD18N40CLBT4G from ON Semiconductor is a high-performance insulated-gate bipolar transistor (IGBT) designed for a wide range of power applications. This IGBT combines the best features of both MOSFETs and bipolar transistors, offering superior efficiency, fast switching, and a high current carrying capability.

Key Features

• High Current Rating: The device is capable of handling continuous collector currents up to 18A, making it suitable for high-power applications.
• High Voltage Capability: With a collector-emitter breakdown voltage of 400V, the NGD18N40CLBT4G can be used in circuits with high operating voltages.
• Low On-State Voltage Drop: The low V<sub>CE(sat) of the IGBT minimizes conduction losses and improves overall efficiency.
• Fast Switching Speed: The device features a fast switching speed, which reduces switching losses and enhances performance in applications such as inverters and converters.
• Co-Packaged Free Wheeling Diode: It includes a co-packaged diode with a soft recovery characteristic, which is beneficial for reducing electromagnetic interference (EMI) and improving reliability in switching applications.

Applications

The NGD18N40CLBT4G is ideal for a variety of applications, including:

• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits
• DC-AC inverters for solar energy systems
• Motor drives and controls
• Inductive heating and welding equipment

Package and Quality

This IGBT is offered in a D2PAK (TO-263) package, which provides a compact footprint and excellent thermal performance. ON Semiconductor is committed to high-quality standards, and the NGD18N40CLBT4G is no exception, ensuring reliable operation even in demanding environments.

Environmental Compliance

The NGD18N40CLBT4G is RoHS compliant and free from environmentally harmful substances, making it a responsible choice for electronic designs.