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FQP19N10

Part No FQP19N10
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 100V N-Channel MOSFET | MOSFET N-CH 100V 19A TO-220
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 19A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 9.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 780pF at 25V
Power Dissipation (Maximum) 75W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175423-FQP19N10
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP19N10 CAD Model

Description

ON Semiconductor FQP19N10 MOSFET Overview

The ON Semiconductor FQP19N10 is a robust N-channel QFET® MOSFET that offers high-performance features for a wide range of applications. Designed with advanced PowerTrench® technology, this MOSFET provides superior on-state resistance and lower gate charge, making it a highly efficient choice for power management tasks.

Key Features

  • High Current Capability: The FQP19N10 is capable of handling a continuous drain current of up to 19A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical R<sub>DS(on) value of only 0.18Ω, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
  • High Voltage Tolerance: The device can withstand a maximum drain-source voltage (V<sub>DSS) of 100V, providing a wide safety margin for voltage fluctuations.
  • Fast Switching: The FQP19N10 is designed for quick switching, reducing transition losses and improving performance in high-frequency applications.
  • Temperature Resilience: It operates within a junction temperature range of -55°C to 175°C, ensuring reliable performance under extreme conditions.
  • TO-220 Package: Housed in a TO-220 package, the FQP19N10 offers excellent thermal and electrical characteristics, while being easy to mount and handle.

Applications

The FQP19N10 from ON Semiconductor is versatile and can be used in various applications, including:

  • Power supplies
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Power management systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the FQP19N10 MOSFET is no exception. It is designed to meet rigorous industry standards, ensuring long-term reliability and consistent performance. Whether for commercial or industrial use, the FQP19N10 is an excellent choice for designers looking for a high-quality MOSFET that can deliver efficient power control and conversion.

Conclusion

In summary, the FQP19N10 N-channel MOSFET from ON Semiconductor is a powerful, efficient, and reliable component that offers a combination of low on-resistance, high voltage tolerance, and fast switching capabilities. It is suitable for a wide range of applications, where effective power management is crucial.

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