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Same model may have multiple batches, images only for reference.
BF961 Infineon Technologies
Same model may have multiple batches, images only for reference.

BF961

Part No BF961
Manufacturer Infineon Technologies
Catalog RFFETs
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode / Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family RFFETs
Manufacturer Infineon Technologies
Win Source Part Number 234898-BF961
Popularity Medium
Supply and Demand Status Balance
Family Name BF961
Introduction Date July 09, 1999
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BF961 CAD Model

Description

Product Overview

The BF961 is a dual-gate N-channel MOSFET, renowned for its low noise and high gain properties. It is used extensively in RF amplification and mixing applications.

Applications

  • RF Mixer Circuits
  • UHF/VHF Applications
  • Pre-Amplifier Stages
  • Antenna Amplifiers

Features and Benefits

  • Superior noise performance for clearer signal reception.
  • High gain for effective amplification.
  • Suitable for use in VHF and UHF frequency ranges.
  • Dual-gate configuration for enhanced control and isolation.

Additional Details

The BF961 offers a unique combination of high gain and low noise, making it ideal for sensitive radio frequency applications where signal clarity is critical.

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Quantity Unit Price Ext. Price
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70+ $1.6918 $118.4260
110+ $1.6391 $180.3010
150+ $1.5862 $237.9300
190+ $1.5333 $291.3270
255+ $1.3747 $350.5485
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