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KSA992FBU

Part No KSA992FBU
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description KSA992 Series 120 V 50 mA Through Hole PNP Epitaxial Silicon Transistor -TO-92-3
Sample
Rohs State rohs
ECAD Module
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Case / Package TO-92
Collector Base Voltage (VCBO) -120 V
Collector Emitter Breakdown Voltage 120 V
Collector Emitter Saturation Voltage -90 mV
Collector Emitter Voltage (VCEO) 120 V
Current Rating -50 mA
Element Configuration Single
Emitter Base Voltage (VEBO) -5 V
Frequency 100 MHz
Gain Bandwidth Product 100 MHz
Height 4.58 mm
hFE Min 200
Lead Free Lead Free
Length 4.58 mm
Max Collector Current 50 mA
Max Frequency 1 MHz
Max Operating Temperature 150 °C
Max Power Dissipation 500 mW
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Packaging Bulk
Polarity PNP
Power Dissipation 500 mW
Radiation Hardening No
REACH SVHC No SVHC
RoHS Compliant
Schedule B 8541210080
Transition Frequency 100 MHz
Voltage Rating (DC) -120 V
Weight 179 mg
Width 3.86 mm
Win Source Part Number 1131494-KSA992FBU
Categories RF Transistors(BJT)
Manufacturer ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian KSA992FBU CAD Model

Description

Introducing the KSA992FBU PNP Transistor by ON Semiconductor

The KSA992FBU from ON Semiconductor is a high-performance PNP transistor designed to meet the needs of a wide range of electronic applications. This versatile component is well-suited for amplification and switching applications, offering a perfect blend of reliability and efficiency.

Key Features

  • High Current Gain Bandwidth Product: With a fT of 50 MHz, the KSA992FBU is capable of working efficiently at high frequencies, making it an ideal choice for audio amplification and signal processing applications.
  • Low Noise: Exhibiting an excellent low noise figure, this transistor is particularly suitable for audio applications and other sensitive circuits where noise performance is critical.
  • PNP Bipolar Junction Transistor: As a PNP transistor, it is designed to allow for a smooth flow of current across the collector-emitter terminals when a negative base current is applied, providing an effective method for controlling larger currents with smaller ones.
  • High Voltage Tolerance: The KSA992FBU can handle collector-emitter voltages up to -120V, offering robust performance for high voltage applications.
  • Complementary NPN Transistor Available: For applications requiring complementary push-pull configurations, an NPN counterpart (KSC1845FBU) is available, allowing for flexible circuit design.

Applications

The KSA992FBU is a versatile component that can be used in a variety of electronic circuits. It is particularly well-suited for:

  • Audio amplifiers and preamplifiers
  • Signal processing
  • Switching circuits
  • Linear amplification tasks

Quality and Reliability

ON Semiconductor is known for their commitment to quality, and the KSA992FBU is no exception. It is manufactured to the highest standards, ensuring reliable performance and longevity in your electronic projects.

Technical Specifications

Parameter Value Collector-Emitter Voltage (VCEO) -120V Collector Base Voltage (VCBO) -120V Emitter Base Voltage (VEBO) -5V Collector Current (IC) -50mA DC Current Gain (hFE) 70 - 400 Power Dissipation (Pd) 625mW Operating and Storage Junction Temperature Range -55 to +150°C

With its combination of high performance, low noise, and high voltage capabilities, the KSA992FBU from ON Semiconductor is a reliable choice for designers and hobbyists alike.

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