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MJD31CT4G

Part No MJD31CT4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 3A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 1.2V @ 375mA, 3A
Collector Cut-off Current(Max) 50μA
Typical Gain (hFE) (Min) 10 @ 3A, 4V
Maximum Power Dissipation 1.56W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 003607-MJD31CT4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian MJD31CT4G CAD Model

Description

Overview of ON Semiconductor MJD31CT4G

The MJD31CT4G is a high-performance NPN bipolar power transistor from ON Semiconductor, designed for general-purpose amplifier and switching applications. This component is part of the MJD series, which is well-known for its reliability and efficiency in various electronic circuits. The MJD31CT4G is housed in a DPAK (TO-252) surface-mount package, which is ideal for compact PCB layouts where space is at a premium.

Key Features

  • High Collector-Emitter Voltage: The MJD31CT4G boasts a collector-emitter voltage (VCEO) of 100V, making it suitable for high-voltage applications.
  • Collector Current Capability: With a continuous collector current (IC) rating of up to 3A, this transistor can handle significant power for a range of electronic designs.
  • Power Dissipation: It has a power dissipation (PD) of 20W, ensuring robust performance for demanding applications.
  • High DC Current Gain: The device offers a high hFE (DC current gain) range, providing efficient current amplification in circuits.
  • Fast Switching Speeds: The MJD31CT4G is designed for fast switching, enhancing the performance of switching regulators, converters, and power amplifiers.
  • Complementary PNP Type: It has a complementary PNP type, the MJD32CT4G, allowing for push-pull configurations and efficient full-bridge designs.

Applications

The MJD31CT4G is versatile and can be used in a wide array of applications, including:

  • Power supply regulators
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Switching applications
  • Other general-purpose amplification and switching tasks

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The MJD31CT4G is manufactured with the latest semiconductor technologies and rigorous testing procedures to ensure optimal performance and reliability in various operating conditions. This commitment to quality makes the MJD31CT4G a trusted choice for engineers and designers looking for a reliable power transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2786 $50.1480
440+ $0.2286 $100.5840
680+ $0.2215 $150.6200
935+ $0.2143 $200.3705
1,210+ $0.2072 $250.7120
1,615+ $0.1858 $300.0670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,390 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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