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MJE5740

Part No MJE5740
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 320359-MJE5740
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MJE5740 CAD Model

Description

ON Semiconductor MJE5740 Power Transistor

The MJE5740 from ON Semiconductor is a high-performance power transistor designed for a wide range of applications requiring efficient power control and amplification. This device is a silicon NPN transistor that is part of ON Semiconductor's portfolio of power bipolar transistors, renowned for their reliability and robustness in handling high voltage and current.

Featuring a high collector-emitter voltage (VCEO) of 400V and a collector current (IC) rating of up to 8A, the MJE5740 is capable of managing significant power levels, making it suitable for linear and switching applications. Its power dissipation (PD) is rated at 50W, which allows for substantial power handling capability, and it operates within a junction temperature range of -65°C to 150°C, ensuring stability across a wide range of operating conditions.

The MJE5740 is designed with a TO-220 package, a widely used and easily mountable form factor that aids in effective heat dissipation. This package is favored for its balance between performance and practicality, as it provides a solid thermal and electrical interface to the circuit board while remaining compact enough for use in space-constrained applications.

Applications for the MJE5740 are diverse and include power regulators, converters, inverters, and motor control circuits. Its high voltage and current handling capabilities also make it suitable for use in power supply designs, audio amplifiers, and other high-power electronic systems.

ON Semiconductor's commitment to quality ensures that the MJE5740, like all its products, meets stringent standards for performance and reliability. This commitment is reflected in the device's features, which include fast switching speeds, a low saturation voltage drop, and a high gain-bandwidth product. The MJE5740 is an excellent choice for designers seeking a reliable power transistor that can deliver high performance in demanding environments.

Key Features:

  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Collector Current - Continuous (Max): 8A
  • Power Dissipation (Max): 50W
  • TO-220 Package for Effective Heat Dissipation
  • Junction Temperature Range: -65°C to 150°C

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