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MMBT3906LT3G

Part No MMBT3906LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1078266-MMBT3906LT3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMBT3906LT3G CAD Model

Description

ON Semiconductor MMBT3906LT3G PNP Transistor

The MMBT3906LT3G is a high-quality PNP bipolar junction transistor (BJT) from ON Semiconductor, a renowned leader in power and signal management solutions. This small-signal transistor is a versatile component commonly used in a wide range of electronic applications due to its efficient amplification and switching capabilities.

Designed for general-purpose amplifier and switching applications, the MMBT3906LT3G exhibits excellent performance characteristics that make it suitable for a variety of circuits. It is housed in a compact SOT-23 surface-mount package, which is ideal for space-constrained applications and allows for efficient assembly in high-volume production.

The MMBT3906LT3G features a collector-emitter voltage (VCEO) of -40V and a collector current (IC) of up to -200mA, providing sufficient headroom for moderate power handling requirements. Its transition frequency (fT) is specified at 250MHz, which ensures good frequency response for amplification purposes. The transistor also has a low collector-emitter saturation voltage (VCE(sat)), reducing power loss during operation.

One of the key advantages of the MMBT3906LT3G is its robustness. ON Semiconductor has designed this transistor with high reliability in mind, ensuring it can withstand the rigors of everyday use. The device also features a -65°C to +150°C operating junction temperature range, making it suitable for use in environments with varying temperature conditions.

For designers and engineers looking for a dependable PNP transistor for their circuit designs, the MMBT3906LT3G is an excellent choice. It combines ON Semiconductor's commitment to quality with performance and affordability, making it a go-to component for both prototyping and mass production. Whether used in amplification stages, switch controls, or as a discrete component in digital logic circuits, the MMBT3906LT3G is a reliable and cost-effective solution.

With its balance of performance, size, and thermal efficiency, the MMBT3906LT3G from ON Semiconductor is an essential building block for modern electronics and an integral part of any electronic component inventory.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5,265+ $0.0095 $50.0175
11,240+ $0.0089 $100.0360
17,445+ $0.0086 $150.0270
25,000+ $0.0080 $200.0000
32,470+ $0.0077 $250.0190
40,545+ $0.0074 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,360 pieces
MOQ: 5265 pcs
Order Increment : 1 pcs
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