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MMUN2233LT1G

Part No MMUN2233LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 024595-MMUN2233LT1G
Family Name MMUN2233L
Introduction Date June 05, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian MMUN2233LT1G CAD Model

Description

ON Semiconductor MMUN2233LT1G Bipolar Transistor

The MMUN2233LT1G is a high-performance bipolar transistor from ON Semiconductor, renowned for its reliability and efficiency in various electronic applications. This PNP transistor is a versatile component designed to meet the stringent requirements of modern electronic circuits. Its compact SOT-23 package makes it suitable for space-constrained applications while providing excellent power handling capabilities.

Key Features

  • Type: PNP Bipolar Transistor
  • Package: SOT-23
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 6.0V
  • Collector Current (IC): 100mA
  • Power Dissipation (Pd): 225mW
  • DC Current Gain (hFE): 100 to 300 at IC = 10mA
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

The MMUN2233LT1G is designed for general-purpose amplification and switching applications. Its low saturation voltage and high gain make it an excellent choice for low-power amplification and low-voltage switching applications. The device is also characterized by its low noise figure, which is crucial for maintaining signal integrity in sensitive audio and signal processing circuits.

Applications

  • Signal Amplification
  • Power Management
  • Switching Circuits
  • Linear Amplification
  • Audio Amplifiers
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits

ON Semiconductor's MMUN2233LT1G is built with state-of-the-art manufacturing processes that ensure high reliability and performance consistency. The device's robustness is further enhanced by its moisture sensitivity level 1 (MSL 1) rating, which indicates that it can be used in environments where moisture exposure is a concern.

Whether you are designing consumer electronics, automotive systems, or industrial controls, the MMUN2233LT1G provides the performance and dependability that engineers have come to expect from ON Semiconductor. Its commitment to quality makes it a preferred choice for designers looking to create compact, efficient, and reliable electronic solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,065+ $0.0471 $50.1615
2,270+ $0.0441 $100.1070
3,525+ $0.0426 $150.1650
5,055+ $0.0396 $200.1780
6,545+ $0.0382 $250.0190
8,175+ $0.0367 $300.0225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,355 pieces
MOQ: 1065 pcs
Order Increment : 1 pcs
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